2SK3390IXTB-E数据表ic资料供应代理瑞萨-114ic电子网

零件编号	下载&订购	功能描述	制造商&上传企业
2SK3390IXTB-E	文件：180.61 Kbytes Page：12 Pages	Silicon N-Channel MOS FET UHF Power Amplifier Features •Highpoweroutput,Highgain,Highefficiency PG=17dB,Pout=6.31W,ηadd=60min.(f=836MHz) •Compactpackagecapableofsurfacemounting	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
2SK3390	文件：78.47 Kbytes Page：7 Pages	SiliconNChannelMOSFETUHFPowerAmplifier Features •Highpoweroutput,Highgain,Highefficiency PG=17dB,Pout=6.31W,ηadd=60min.(f=836MHz) •Compactpackagecapableofsurfacemounting	HitachiHitachi, Ltd. 日立公司
2SK3390	文件：180.61 Kbytes Page：12 Pages	SiliconN-ChannelMOSFETUHFPowerAmplifier Features •Highpoweroutput,Highgain,Highefficiency PG=17dB,Pout=6.31W,ηadd=60min.(f=836MHz) •Compactpackagecapableofsurfacemounting	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司

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2SK3390IXTB-E

文件：180.61 Kbytes

Page：12 Pages

Silicon N-Channel MOS FET UHF Power Amplifier

Features •Highpoweroutput,Highgain,Highefficiency PG=17dB,Pout=6.31W,ηadd=60min.(f=836MHz) •Compactpackagecapableofsurfacemounting

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

文件：78.47 Kbytes

Page：7 Pages

SiliconNChannelMOSFETUHFPowerAmplifier

Features •Highpoweroutput,Highgain,Highefficiency PG=17dB,Pout=6.31W,ηadd=60min.(f=836MHz) •Compactpackagecapableofsurfacemounting

HitachiHitachi, Ltd.

日立公司

文件：180.61 Kbytes

Page：12 Pages

SiliconN-ChannelMOSFETUHFPowerAmplifier

Features •Highpoweroutput,Highgain,Highefficiency PG=17dB,Pout=6.31W,ηadd=60min.(f=836MHz) •Compactpackagecapableofsurfacemounting

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

更多2SK3390IXTB-E供应商更新时间2024-4-27 17:00:00