isc N-Channel MOSFET Transistor

文件：330.9 Kbytes 页数：2 Pages

ISC

无锡固电

MOS Field Effect Transistor

文件：47.5 Kbytes 页数：1 Pages

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isc N-Channel MOSFET Transistor

文件：399.29 Kbytes 页数：2 Pages

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SWITCHING P-CHANNEL POWER MOS FET

文件：237.98 Kbytes 页数：9 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：331.74 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDESCRIPTION\nThe 2SK3361 is N-Channel MOS Field Effect Transistor designed for high current switching application.FEATURES\n• Low on-state resistance\nRDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 20 A)\nRDS(on)2= 28 mΩMAX. (VGS= 4.5 V, ID= 20 A)\n• Low Ciss: Ci • Low on-state resistance\nRDS(on)1= 20 mΩMAX. (VGS= 10 V, ID= 20 A)\nRDS(on)2= 28 mΩMAX. (VGS= 4.5 V, ID= 20 A)\n• Low Ciss: Ciss= 4900 pF TYP.\n• Built-in gate protection diode\n• Isolated TO-220 package;

Renesas

瑞萨

N-CHANNEL SILICON POWER MOS-FET

High speed switching\nLow on-resistance\nNo secondary breakdown\nLow driving power\nHigh voltage\nAvalanche-proofApplications\nSwitching regulators\nDC-DC converters\nGeneral purpose power amplifier;

FUJI

富士通

N-CHANNEL SILICON POWER MOS-FET

FUJI

富士通