SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1= 9.0 mΩMAX. (VGS= 10 V, ID= 18 A) RDS(on)2= 12.0 mΩMAX. (VGS

文件：83.56 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 12.0 mΩ MAX. (VGS = 4.5 V, ID = 18 A

文件：237.37 Kbytes 页数：9 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：399.29 Kbytes 页数：2 Pages

ISC

无锡固电

MOS Field Effect Transistor

文件：47.5 Kbytes 页数：1 Pages

KEXIN

科信电子

N-Channel 30-V (D-S) MOSFET

文件：959.92 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1= 9.0 mΩMAX. (VGS= 10 V, ID= 18 A) RDS(on)2= 12.0 mΩMAX. (VGS

文件：83.56 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 12.0 mΩ MAX. (VGS = 4.5 V, ID = 18 A

文件：237.37 Kbytes 页数：9 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET

文件：237.98 Kbytes 页数：9 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：331.74 Kbytes 页数：2 Pages

ISC

无锡固电