SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1= 14 mΩ(MAX.) (VGS= 10 V, ID= 15 A) RDS(on)2= 21 mΩ(MAX.) (VGS= 4.5 V, ID= 15 A) RDS(on)3= 29 mΩ(MA

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SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 1

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The 2SK3365 is a Nch Single Power Mosfet 30V 30A 14Mohm Mp-3/To-251. • Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 mΩ (MAX.) (VGS = 4.0 V, ID = 15 A)\n• Low Ciss : Ciss = 1300 pF (TYP.)\n• Built-in gate protection diode\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日;

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SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 1

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1= 14 mΩ(MAX.) (VGS= 10 V, ID= 15 A) RDS(on)2= 21 mΩ(MAX.) (VGS= 4.5 V, ID= 15 A) RDS(on)3= 29 mΩ(MA

文件：63.52 Kbytes 页数：8 Pages

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