Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS(on)= 1.1 Ωtyp. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) • Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) • Avalanche ratings

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on) = 1.1 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) • Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) • Avalanche ratings

文件：210.97 Kbytes 页数：9 Pages

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N-channel MOSFET high speed power switching, 500V, 5A

•  Low on-resistance: RDS(on)= 1.1 Ωtyp.\n•  Low leakage current: IDSS = 1 µA max (at VDS = 500 V)\n•  High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)\n•  Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)\n•  Avalanche ratings;

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Power MOSFETs

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on) = 1.1 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) • Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) • Avalanche ratings

文件：210.97 Kbytes 页数：9 Pages

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