丝印：W*；Package：SOT-23；Silicon N-Channel Junction FET

Application HF wide band amplifier

文件：29.58 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel Junction FET

Application\n   HF wide band amplifier

HITACHI

日立

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0

文件：72.85 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC T

文件：239.17 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci

文件：370.41 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 790 pF TYP. • Built-i

文件：39.84 Kbytes 页数：4 Pages

NEC

瑞萨

MOS Field Effect Transistor

Features Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) Low Ciss : Ciss = 790 pF TYP. Built-in Gate Protection Diode

文件：45.96 Kbytes 页数：1 Pages

KEXIN

科信电子

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 790 pF TYP. • Built-i

文件：39.84 Kbytes 页数：4 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci

文件：370.41 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low i

文件：372.04 Kbytes 页数：10 Pages

RENESAS

瑞萨