Silicon N Channel MOS FET High Speed Power Switching

Features 1. Low on-resistance RDS= 130 mΩtyp. 2. High speed switching 3. 4 V gate drive device can be driven from 5 V source

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HitachiHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：88.2 Kbytes 页数：8 Pages

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Silicon N Channel MOS FET High Speed Power Switching

1.  Low on-resistance RDS= 130 mΩtyp.\n2.  High speed switching\n3.  4 V gate drive device can be driven from 5 V source;

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：88.2 Kbytes 页数：8 Pages

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Silicon N Channel MOS FET High Speed Power Switching

文件：108.27 Kbytes 页数：10 Pages

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