2SK3174A

Silicon N Channel MOS FET UHF Power Amplifier

Features •Highpoweroutput,Highgain,Highefficiency P1dB=220W,PG=15.3dB,ηD=61(atP1dB)typ.(f=860MHz) •Compactpackage Suitableforpush-pullcircuit

2SK3175A

Silicon N Channel MOS FET UHF Power Amplifier

Features •Highpoweroutput,Highgain,Highefficiency P1dB=110W,PG=16.0dB,ηD=60(atP1dB)typ.(f=860MHz) •Compactpackage

2SK3176

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

SwitchingRegulator,DC-DCConverterandMotorDriveApplications •Lowdrain-sourceONresistance:RDS(ON)=38mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=30S(typ.) •Lowleakagecurrent:IDSS=100mA(max)(VDS=200V) •Enhancement-mode:Vth=1.5to3.5V(VDS=10V,

2SK3176

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SK3176

Power MOSFET (N-ch 150V VDSS 250V)

Polarity：N-ch\nGeneration：π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\n; Drain current ID 30 A \nPower Dissipation PD 150 W \nDrain-Source voltage VDSS 200 V \n;

2SK3177

Silicon N Channel MOS FET High Speed Power Switching

Features •Lowon-resistanceRDS=90mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

2SK3177

Silicon N Channel MOS FET High Speed Power Switching

Features •Lowon-resistanceRDS=90mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

2SK3177-E

Silicon N Channel MOS FET High Speed Power Switching

Features •Lowon-resistanceRDS=90mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

2SK3179

N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

UHF~SHFBANDLOWNOISEAMPLIFIERAPPLICATION •LowNoiseFigure •HighGain

2SK3174A

Silicon N Channel MOS FET