2SK3150STL-E数据手册库存现货瑞萨RENESAS-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SK3150STL-E	文件：94.95 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：94.95 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SK3150	文件：55.14 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：55.14 Kbytes 页数：9 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK3150L	文件：55.14 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：55.14 Kbytes 页数：9 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK3150L-E	文件：94.95 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：94.95 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

更多2SK3150STL-E供应商更新时间2026-4-2 11:09:00