Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：88.52 Kbytes 页数：8 Pages

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瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：88.52 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：53.01 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

文件：333.43 Kbytes 页数：2 Pages

ISC

无锡固电