Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.7 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.7 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：55.18 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

文件：114.79 Kbytes 页数：11 Pages

RENESAS

瑞萨