SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING)

SILICON N-CHANNEL MOSFET HIGH SPEED POWER SWITCHING

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HITACHIHitachi Semiconductor

日立日立公司

Fast Switching Speed

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ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3204 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance : RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4 V, ID =

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RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3204 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance : RDS(on)1 = 34 mΩ (MAX.) (VGS = 10 V, ID = 8 A) RDS(on)2 = 50 mΩ (MAX.) (VGS = 4 V, ID = 8 A) • Low Ciss : Ciss = 940 pF (T

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NEC

瑞萨

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

Switching Regulator Applications DC?묭C Converter

Switching Regulator Applications DC−DC Converter, and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 150 V) Enhancement−mode

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TOSHIBA

东芝

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 70 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

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HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS= 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

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RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS=35mΩtyp. • High speed switching • 4V gate drive device can be driven from 5V source

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HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS= 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：53.93 Kbytes 页数：4 Pages

RENESAS

瑞萨