Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS=35mΩtyp. • High speed switching • 4V gate drive device can be driven from 5V source

文件：26.42 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS= 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：53.93 Kbytes 页数：4 Pages

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isc N-Channel MOSFET Transistor

文件：324.11 Kbytes 页数：2 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS= 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：53.93 Kbytes 页数：4 Pages

RENESAS

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Silicon N Channel MOS FET High Speed Power Switching

文件：72.3 Kbytes 页数：6 Pages

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