Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：52.87 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET

Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：88.45 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

文件：333.78 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance\n   RDS = 100 mΩ typ.\n• High speed switching\n• 4 V gate drive device can be driven from 5 V source ;

HITACHI

日立

Silicon N Channel MOS FET

Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：88.45 Kbytes 页数：8 Pages

RENESAS

瑞萨