Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 4 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：87.11 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 4 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：51.99 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

文件：333 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching / TO-220AB Package

•  Low on-resistance  RDS(on)= 4 mΩtyp.\n\n•  Low drive current\n\n•  4 V gate drive device can be driven from 5 V source

HITACHI

日立

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 4 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source

文件：87.11 Kbytes 页数：8 Pages

RENESAS

瑞萨

Power MOSFETs

Renesas

瑞萨