2SK3162-E中文资料下载库存现货瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SK3162-E	文件：88.07 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：88.07 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SK3162	文件：88.07 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：88.07 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SK3162	文件：46.57 Kbytes Page：9 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 文件：46.57 Kbytes 页数：9 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK3162	文件：324.51 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：324.51 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多2SK3162-E供应商更新时间2026-4-18 16:30:00