Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS=40mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

文件：54.44 Kbytes 页数：4 Pages

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Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS=35mΩtyp. • High speed switching • 4V gate drive device can be driven from 5V source

文件：26.97 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS=40mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

文件：54.44 Kbytes 页数：4 Pages

RENESAS

瑞萨

N-Channel MOSFET uses advanced trench technology

文件：1.10398 Mbytes 页数：5 Pages

DOINGTER

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