Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：54.02 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS=0.1 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.2 Kbytes 页数：9 Pages

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Silicon N Channel MOS FET High Speed Power Switching

•  Low on-resistance\n•  High speed switching\n•  4 V gate drive device can be driven from 5 V source;

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：54.02 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS=0.1 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.2 Kbytes 页数：9 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：54.02 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

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Features Low on-resistance RDS=0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS=0.1 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.2 Kbytes 页数：9 Pages

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