Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS=0.1 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：94.2 Kbytes 页数：9 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

文件：54.02 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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N-Channel 100 V (D-S) MOSFET

文件：1.01428 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Silicon N Cannel MOSFET

Features Low on-resistance RDS=0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source

文件：45.08 Kbytes 页数：1 Pages

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