2SJ527L-E技术资料参数供应价格瑞萨RENESAS-114ic电子网

首页 >2SJ527L-E>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ527L-E	文件：93.96 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching 文件：93.96 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ527S	文件：45.39 Kbytes Page：1 Pages	Hight Speed Power Switching Hight Speed Power Switching Features Low on-resistance RDS(on)=0.3 typ. Low drive current High speed switching 4V gate drive devices. 文件：45.39 Kbytes 页数：1 Pages	KEXIN 科信电子	KEXIN
2SJ527S	文件：93.96 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching 文件：93.96 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ527S	文件：54.17 Kbytes Page：9 Pages	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching 文件：54.17 Kbytes 页数：9 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI

更多2SJ527L-E供应商更新时间2026-1-18 16:00:00