Low input capacitance and gate charge

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

文件：398.58 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.135 Ω, 20 A TO-247 MDmesh™ II Power MOSFET

Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical struc

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STMICROELECTRONICS

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N-CHANNEL 600V - 0.125ohm - 26A TO-247 Zener-Protected MDmesh TM Power MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：233.16 Kbytes 页数：9 Pages

STMICROELECTRONICS

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