STL200N45LF7

N-channel 45 V, 1.4 mΩ typ., 120 A STripFET ™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFET™F7technologywithanenhancedtrench

STL20NF20

N-channel 200 V, 0.10 Ω, 15 A PowerFLAT™ (5x6) low gate charge STripFET™ Power MOSFET

Features ■Exceptionaldv/dtcapability ■Lowgatecharge ■100avalanchetested Application ■Switchingapplications Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFET™process hasspecificallybeendesignedtominimizeinput capacitanceandgatec

STL20NM20N

N-CHANNEL 200V - 0.088ohm - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET

GeneralFeatures ■WORLDWIDELOWESTGATECHARGE ■TYPICALRDS(on)=0.088Ω ■IMPROVEDDIE-TO-FOOTPRINTRATIO ■VERYLOWPROFILEPACKAGE(1mmMAX) ■VERYLOWTHERMALRESISTANCE ■LOWGATERESISTANCE ■LOWINPUTCAPACITANCE ■HIGHdv/dtandAVALANCHECAPABILITIES DESCRIPTION This200VMO

STL20DN10F7

N-channel enhancement mode

STL20DNF06LAG

Automotive-grade dual N-channel 60 V

STL20N6F7

High avalanche ruggedness

STL20N6F7

60 N-Channel Enhancement Mode Power MOSFET

STL20NF06LAG

Automotive-grade N-channel 60 V

STL20NM20N

N-CHANNEL 200V - 0.088廓 - 20A PowerFLAT??ULTRA LOW GATE CHARGE MDmesh??II MOSFET

STL20NM20N_06

N-CHANNEL 200V - 0.088廓 - 20A PowerFLAT??ULTRA LOW GATE CHARGE MDmesh??II MOSFET