60 A, 650 V field stop trench gate IGBT with Ultrafast diode

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature • Very high speed switching\n• Tight parameters distribution\n• Safe paralleling• Low thermal resistance\n• 6 μs short-circuit withstand time\n• Ultrafast soft recovery antiparallel diode;

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意法半导体

丝印：GW60H65DRF；Package：TO-247；60 A, 650 V field stop trench gate IGBT with Ultrafast diode

文件：2.06606 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 120A 420W TO247

STMICROELECTRONICS

意法半导体

60 A, 650 V field stop trench gate IGBT

文件：1.43522 Mbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

60 A, 650 V field stop trench gate IGBT

Features ■ High speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 μs short-circuit withstand time ■ Lead free package Applications ■ Photovoltaic inverters ■ Uninterruptible power supply ■ Welding ■ Power factor correction ■ High switching

文件：1.51865 Mbytes 页数：14 Pages

STMICROELECTRONICS

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Low thermal resistance

文件：1.23474 Mbytes 页数：16 Pages

STMICROELECTRONICS

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