N-channel 60 V, 1.7 m廓 typ., 180 A STripFET??VI DeepGATE??Power MOSFET in H짼PAK-2 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features ■ Low gate charge ■ Very low on-resistance ■ High avalanche ru

文件：730.79 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N沟道60 V、1.7 mOhm典型值、180 A STripFET F6功率MOSFET，H2PAK-2封装

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. • Low gate charge \n• Very low on-resistance \n• High avalanche ruggedness;

ST

意法半导体

TO-263

ST

上传：深圳市佳斯泰科技有限公司

BGA

ST

上传：深圳市凯睿晟科技有限公司

BGA

ST/意法

上传：芯灿微（深圳）科技有限公司