Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a pos • Designed for soft commutation only\n• Maximum junction temperature: TJ= 175 °C\n• Tail-less switching off\n• VCE(sat)= 1.8 V (typ.) @ IC= 40 A• Tight parameters distribution\n• Safe paralleling\n• Low thermal resistance\n• Low VFsoft recovery co-packaged diode;

ST

意法半导体

丝印：GWT40V60DLF；Package：TO-3P；Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

文件：1.28659 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 283W TO3P-3

STMICROELECTRONICS

意法半导体

DUAL MOS GATED BARRIER RECTIFIER

文件：118.65 Kbytes 页数：3 Pages

UTC

友顺

40A 60V MOS Schottky Rectifier

文件：776.35 Kbytes 页数：7 Pages

PFC

节能元件

40A 60V MOS Schottky Rectifier

文件：776.35 Kbytes 页数：7 Pages

PFC

节能元件