丝印：270N4F3；Package：H2PAK-6；N-channel 40 V, 1.4 m廓 typ., 180 A STripFET??III Power MOSFET in H2PAK-2 and H2PAK-6 packages

文件：1.02386 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 40 V, 1.4 m廓 typ., 180 A STripFET III Power MOSFET

文件：1.02386 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 40 V, 1.4 mOhm typ., 180 A STripFET F3 Power MOSFET in a H2PAK-6 package

This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.\n • Designed for automotive applications and AEC-Q101 qualified\n• Low profile, very low parasitic inductance, high current package;

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意法半导体

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TO-263

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BGA

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