STH110N10F7-6

N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-6 package; Among the lowest R\nDS(on) on the market \nExcellent figure of merit (FoM) \nLow C\nrss/C\niss ratio for EMI immunity \nHigh avalanche ruggedness \n;

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.\n

STH110N10F7-6

丝印：110N10F7；Package：H2PAK-6；N-channel 100 V, 4.9 m廓 typ.,110 A, STripFET??F7 Power MOSFETs in H짼PAK-2 and H짼PAK-6 packages