650 V、60 A高速沟槽栅场截止HB系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a s • Maximum junction temperature: TJ = 175 °C \n• High speed switching series \n• Minimized tail current \n• VCE(sat)= 1.6 V (typ.) @ IC= 60 A \n• Tight parameters distribution \n• Safe paralleling \n• Low thermal resistance;

ST

意法半导体

Low thermal resistance

文件：1.23474 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 80A 375W TO247

STMICROELECTRONICS

意法半导体

Low thermal resistance

文件：1.57984 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

文件：689.96 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Low thermal resistance

文件：1.57984 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体