High speed switching series

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STMICROELECTRONICS

意法半导体

丝印：GW80H65DFB；Package：TO-247；Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

文件：1.46448 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Tight parameter distribution

文件：937.25 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

650 V、80 A高速沟槽栅场截止HB系列IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the • Maximum junction temperature: TJ = 175 °C \n• High speed switching series \n• Minimized tail current \n• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A \n• Tight parameter distribution \n• Safe paralleling \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• Ve;

ST

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 120A 469W TO-247

STMICROELECTRONICS

意法半导体

650 V、80 A高速沟槽栅场截止HB系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching ev • VCE(sat) = 1.6 V (typ.) @ IC = 80 A \n• Maximum junction temperature: TJ = 175 °C \n• High speed switching series \n• Minimized tail current \n• Tight parameter distribution \n• Safe paralleling \n• Low thermal resistance \n• Very fast soft recovery antiparallel diode \n• Excellent switching perfo;

ST

意法半导体

Package：TO-247-4；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT BIPO 650V 80A TO247

STMICROELECTRONICS

意法半导体