STGW60H65DRF数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.

特性 Features

• Very high speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• 6 μs short-circuit withstand time
• Ultrafast soft recovery antiparallel diode

简介

STGW60H65DRF属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGW60H65DRF晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。