STGW60H60DLFB中文资料Trench gate field-stop IGBT, HB series 600 V, 60 A high speed数据手册ST规格书

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the improved \"H\" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

特性 Features

• Maximum junction temperature: TJ= 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat)= 1.6 V (typ.) @ IC= 60 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Low VFsoft recovery co-packaged diode
• Lead free package

简介

STGW60H60DLFB属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGW60H60DLFB晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。