Trench Field-Stop Technology IGBT

DESCRIPTION · Optimized for Low Conduction Losses · Tight parameters distribution · Safer Paralleling · Low thermal resistance · Soft and very fast recovery anti parallel diode APPLICATIONS · PFC Circuits · Motor Drives · Uninterruptible power supplies (UPS)

文件：303.76 Kbytes 页数：2 Pages

ISC

无锡固电

Trench gate field-stop IGBT, M series 650 V, 30 A low loss

文件：726.59 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

沟槽栅场截止IGBT，M系列，650 V、30 A，低损耗

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermor • 6 µs of minimum short-circuit withstand time \n• VCE(sat) = 1.55 V (typ.) @ IC = 30 A \n• Tight parameters distribution \n• Safer paralleling \n• Low thermal resistance \n• Soft and very fast recovery antiparallel diode;

ST

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 30A TO247-3

STMICROELECTRONICS

意法半导体

汽车级650 V 30 A低损耗沟槽栅场截止M系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. • AEC-Q101 qualified \n• Maximum junction temperature: TJ = 175 °C \n• 6 μs of minimum short-circuit withstand time \n• VCE(sat) = 1.55 V (typ.) @ IC = 30 A \n• Tight parameter distribution \n• Safer paralleling \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• Soft and ve;

ST

意法半导体