MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features 1) AEC-Q101 qualified (Please see the orderable part number list) 2) 1.5-V gate drive voltage. 3) Low drain-source on-resistance RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS =

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MOSFETs Silicon P-Channel MOS (U-MOS??

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MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features 1) AEC-Q101 qualified (Please see the orderable part number list) 2) 1.5-V gate drive voltage. 3) Low drain-source on-resistance RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS =

文件：273.76 Kbytes 页数：9 Pages

TOSHIBA

东芝

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features 1) AEC-Q101 qualified (Please see the orderable part number list) 2) 1.5-V gate drive voltage. 3) Low drain-source on-resistance RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS =

文件：273.76 Kbytes 页数：9 Pages

TOSHIBA

东芝