Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

文件：171.03 Kbytes 页数：5 Pages

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P-Channel 60 V (D-S) MOSFET

文件：1.78389 Mbytes 页数：7 Pages

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Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

文件：182.04 Kbytes 页数：5 Pages

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Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

文件：221.92 Kbytes 页数：5 Pages

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Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

High-Speed Switching Applications Analog Switch Applications • Optimum for high-density mounting in small packages • Low on-resistance : RDS(ON) = 12 Ω (max) (@VGS = −4 V) : RDS(ON) = 32 Ω (max) (@VGS = −2.5 V)

文件：140.49 Kbytes 页数：5 Pages

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Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：π-MOSⅥ\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID -0.1 A \nPower Dissipation PD 0.1 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS +/-20 V ;

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Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：π-MOSⅥ\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID -0.1 A \nPower Dissipation PD 0.15 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS +/-20 V ;

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