Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

文件：221.92 Kbytes 页数：5 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

High-Speed Switching Applications Analog Switch Applications • Optimum for high-density mounting in small packages • Low on-resistance : RDS(ON) = 12 Ω (max) (@VGS = −4 V) : RDS(ON) = 32 Ω (max) (@VGS = −2.5 V)

文件：140.49 Kbytes 页数：5 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

文件：184.06 Kbytes 页数：5 Pages

TOSHIBA

东芝

Audio applications

文件：112.56 Kbytes 页数：1 Pages

OHMITE

Field Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Analog Switch Applications

High-Speed Switching Applications Analog Switch Applications • Optimum for high-density mounting in small packages • Low ON-resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

文件：155.24 Kbytes 页数：5 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)

文件：171.03 Kbytes 页数：5 Pages

TOSHIBA

东芝