SSM3J328R,LF(T资料datasheet下载批发供应-114ic电子网

零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
SSM3J328R	文件：491.08 Kbytes Page：9 Pages	P-Channel30V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SSM3J328R	文件：1.58274 Mbytes Page：73 Pages	BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA
SSM3J328R	文件：413.4 Kbytes Page：9 Pages	MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications •PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=88.4mΩ(max)(@VGS=-1.5V) RDS(ON)=56.0mΩ(max)(@VGS=-1.8V) RDS(ON)=39.7mΩ(max)(@VGS=-2.5V) RDS(ON)=29.8mΩ(max)(@VGS=-4.5V)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA
SSM3J328R	文件：215.66 Kbytes Page：6 Pages	PowerManagementSwitchApplications ○PowerManagementSwitchApplications •1.5-Vdrive •LowON-resistance:RDS(ON)=88.4mΩ(max)(@VGS=-1.5V) RDS(ON)=56.0mΩ(max)(@VGS=-1.8V) RDS(ON)=39.7mΩ(max)(@VGS=-2.5V)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA

更多SSM3J328R,LF(T供应商更新时间2025-5-19 17:48:00