Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??

○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V)

文件：213.77 Kbytes 页数：6 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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丝印：KFG；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V)

文件：432.89 Kbytes 页数：9 Pages

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P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：1.038589 Mbytes 页数：9 Pages

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微碧半导体

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V)

文件：432.89 Kbytes 页数：9 Pages

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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

文件：232.15 Kbytes 页数：6 Pages

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Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID -3.9 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-8 V ;

Toshiba

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