型号：SSM3J327R；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V)

文件：432.89 Kbytes 页数：9 Pages

TOSHIBA

东芝

型号：KFG1G1612M-DEB5；FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

型号：KFG1G1612M-DED5；FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

型号：KFG1G16D2M-DEB5；FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

型号：KFG1G16D2M-DEB6；FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

型号：KFG1G16D2M-DED5；FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

型号：KFG1G16D2M-DED6；FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

型号：KFG1G16D2M-DIB5；FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

型号：KFG1G16D2M-DIB6；FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星

型号：KFG1G16D2M-DID5；FLASH MEMORY(54MHz)

INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides informatio

文件：1.68043 Mbytes 页数：125 Pages

Samsung

三星