丝印：KFT；Package：SOT-23F；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

文件：240.48 Kbytes 页数：8 Pages

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丝印：KFT；Package：SOT-23F；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

文件：240.48 Kbytes 页数：8 Pages

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丝印：KFT；Package：SOT-23F；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

文件：240.48 Kbytes 页数：8 Pages

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丝印：KFT；Package：SOT-23F；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

文件：240.48 Kbytes 页数：8 Pages

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丝印：KFT；Package：UFM；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

文件：266.12 Kbytes 页数：8 Pages

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丝印：KFT；Package：UFM；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

文件：266.12 Kbytes 页数：8 Pages

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东芝

丝印：KFT；Package：UFM；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

文件：266.12 Kbytes 页数：8 Pages

TOSHIBA

东芝

丝印：KFT；Package：UFM；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.5 V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

文件：266.12 Kbytes 页数：8 Pages

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丝印：KFT；Package：UDFN6B；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

文件：242.79 Kbytes 页数：8 Pages

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丝印：KFT；Package：TSOP6F；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Note 1) (2) 175 ℃ MOSFET (3) 4.5-V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

文件：249.69 Kbytes 页数：8 Pages

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