丝印：KFY；Package：TSOP6F；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V drive (3) Low drain-source on-resistance : RDS(ON) = 25.8 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 20.9 mΩ (typ.) (@VGS = 10 V)

文件：460.24 Kbytes 页数：9 Pages

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丝印：KFY；Package：TSOP6F；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V drive (3) Low drain-source on-resistance : RDS(ON) = 25.8 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 20.9 mΩ (typ.) (@VGS = 10 V)

文件：460.24 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：KFY；Package：TSOP6F；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V drive (3) Low drain-source on-resistance : RDS(ON) = 25.8 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 20.9 mΩ (typ.) (@VGS = 10 V)

文件：460.24 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：KFY；Package：TSOP6F；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V drive (3) Low drain-source on-resistance : RDS(ON) = 25.8 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 20.9 mΩ (typ.) (@VGS = 10 V)

文件：460.24 Kbytes 页数：9 Pages

TOSHIBA

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丝印：KFY；Package：TSOP6F；MOSFETs Silicon N-channel MOS

文件：458.99 Kbytes 页数：9 Pages

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丝印：KFYLL；Package：SOT-23；1.2MHz, 30V BLAS Driver

文件：949.31 Kbytes 页数：5 Pages

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