TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

High Speed Switching Applications • Small package • Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)

文件：157 Kbytes 页数：5 Pages

TOSHIBA

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：482.54 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

High Speed Switching Applications

文件：591.5 Kbytes 页数：5 Pages

TOSHIBA

东芝

High Speed Switching Applications

文件：591.5 Kbytes 页数：5 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Toshiba

东芝