Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V)

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Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：π-MOSⅥ\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID -0.1 A \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-10 V ;

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Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V)

文件：216.92 Kbytes 页数：5 Pages

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Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V)

文件：175.61 Kbytes 页数：5 Pages

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Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance : Ron = 8 Ω (max) (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V)

文件：180.1 Kbytes 页数：5 Pages

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