Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：KFJ；Package：2-3Z1S；TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○Power Management Switch Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V)

文件：351.56 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：KFJ；Package：SOT-23；P−CHANNEL MOSFET

FEATURES VDS (V) = -30V RDS(ON) 46m (VGS = -10V) RDS(ON) 54m (VGS = -4.5V) APPLICATIONS For Mobile Computing Load Switch Notebook Adaptor Switch DC/DC Converter

文件：463.34 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：KFJ；Package：SOT-23；P−CHANNEL MOSFET

FEATURES VDS (V) = -30V RDS(ON)

文件：364.1 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

Power Management Switch Applications

文件：216.21 Kbytes 页数：6 Pages

TOSHIBA

东芝

P-Channel 30 V (D-S) MOSFET

文件：1.04867 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○Power Management Switch Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V)

文件：351.56 Kbytes 页数：6 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID -6 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS +/-12 V ;

Toshiba

东芝