Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications

High-Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 477 mΩ (max) (@VGS = −4 V) Ron = 237 mΩ (max) (@VGS = −10 V)

文件：168.46 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：491.29 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Small-signal MOSFET

Polarity：P-ch\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -1.7 A \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝