SSM3J334R

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○PowerManagementSwitchApplications ​​​​​​​ •LowON-resistance:RDS(ON)=71mΩ(max)(@VGS=-10V) RDS(ON)=105mΩ(max)(@VGS=-4.5V) RDS(ON)=136mΩ(max)(@VGS=-4.0V)

SSM3J334R

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SSM3J334R

Marking：KFL；Package：2-3Z1S；TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○PowerManagementSwitchApplications LowON-resistance:RDS(ON)=71mΩ(max)(@VGS=-10V) RDS(ON)=105mΩ(max)(@VGS=-4.5V) RDS(ON)=136mΩ(max)(@VGS=-4.0V)

SSM3J334R

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

SSM3J334R_V01

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○PowerManagementSwitchApplications LowON-resistance:RDS(ON)=71mΩ(max)(@VGS=-10V) RDS(ON)=105mΩ(max)(@VGS=-4.5V) RDS(ON)=136mΩ(max)(@VGS=-4.0V)