TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○ Power Management Switch Applications ​​​​​​​ • Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V)

文件：235.13 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：KFL；Package：2-3Z1S；TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○Power Management Switch Applications Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V)

文件：476.19 Kbytes 页数：6 Pages

TOSHIBA

东芝

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：501.42 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○Power Management Switch Applications Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V)

文件：476.19 Kbytes 页数：6 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID -4 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝