型号：SSM3J334R；Package：2-3Z1S；TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○Power Management Switch Applications Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V)

文件：476.19 Kbytes 页数：6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

型号：KFL；P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：790.5 Kbytes 页数：9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

型号：KFL-1ML-N；Infrared Emitting Diodes(GaAIAs)

Description The IRED have a with angular response and relatively low-cost compared to can type devices. The KFL-1ML-N is a high-power GaAlAs IRED mounted in TO-46K type header with clear epoxy encapsulation. Features ◆ Wide angular response ◆ Peak emission wavelength ?p=850nm ◆ Relativery lo

文件：67.84 Kbytes 页数：4 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团