丝印：KFO；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 75 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 55 mΩ (max) (@VGS = -4.5 V)

文件：241.69 Kbytes 页数：9 Pages

TOSHIBA

东芝

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：501.73 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power Management Switches

文件：236.37 Kbytes 页数：9 Pages

TOSHIBA

东芝

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 75 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 55 mΩ (max) (@VGS = -4.5 V)

文件：241.69 Kbytes 页数：9 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID -4 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-8 V ;

Toshiba

东芝