丝印：KFQ；Package：SOT-23F；MOSFETs Silicon P-Channel MOS

Applications • Power Management Switches Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V)

文件：424.34 Kbytes 页数：9 Pages

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丝印：KFQ；Package：SOT-23F；MOSFETs Silicon P-Channel MOS

文件：355.66 Kbytes 页数：9 Pages

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MOSFETs Silicon P-Channel MOS

Applications • Power Management Switches Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V)

文件：424.34 Kbytes 页数：9 Pages

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Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：U-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID -6 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS -12 V \nGate-Source voltage VGSS +/-10 V ;

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