SSM3J328R

Power Management Switch Applications

○PowerManagementSwitchApplications •1.5-Vdrive •LowON-resistance:RDS(ON)=88.4mΩ(max)(@VGS=-1.5V) RDS(ON)=56.0mΩ(max)(@VGS=-1.8V) RDS(ON)=39.7mΩ(max)(@VGS=-2.5V)

SSM3J328R

Marking：KFH；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=88.4mΩ(max)(@VGS=-1.5V) RDS(ON)=56.0mΩ(max)(@VGS=-1.8V) RDS(ON)=39.7mΩ(max)(@VGS=-2.5V) RDS(ON)=29.8mΩ(max)(@VGS=-4.5V)

SSM3J328R

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SSM3J328R

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

SSM3J328R_V01

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=88.4mΩ(max)(@VGS=-1.5V) RDS(ON)=56.0mΩ(max)(@VGS=-1.8V) RDS(ON)=39.7mΩ(max)(@VGS=-2.5V) RDS(ON)=29.8mΩ(max)(@VGS=-4.5V)

SSM3J328R_14

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)