Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 μA max. ● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

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Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 μA max. ● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

文件：158.32 Kbytes 页数：7 Pages

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Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 μA max. ● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

文件：158.32 Kbytes 页数：7 Pages

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Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ ● High speed switching: tr = 100 ns typ, tf = 180 ns typ ● Low leak current: ICES = 1 A max ● Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ

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Silicon N channel IGBT, 360V, 30A

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Silicon N Channel IGBT High speed power switching

Trench gate and thin wafer technology (G6H-II series), High speed switching: tr =80 ns typ., tf = 150 ns typ., Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

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Silicon N Channel IGBT High speed power switching

● Trench gate and thin wafer technology (G6H-II series)\n● High speed switching: tr =80 ns typ., tf = 150 ns typ.\n● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.\n● Low leak current: ICES = 1 A max.\n● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.\n● Isolated ;

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Silicon N Channel IGBT High speed power switching

● Trench gate and thin wafer technology (G6H-II series)\n● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ\n● High speed switching: tr = 100 ns typ, tf = 180 ns typ\n● Low leak current: ICES = 1 A max\n● Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ;

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